Manufacturing Description

Module Manufacturer:	Crucial Technology
Module Part Number:	BL16G36C16U4B.M8FB1
Module Series:	Ballistix Black
DRAM Manufacturer:	Micron Technology
DRAM Components:	C9BLH (CT40A2G8VA-050M:B)
Component Design ID:	Z22A
DRAM Die Revision / Process Node:	B / 17 nm
Module Manufacturing Date:	Week 31, 2021
Manufacturing Date Decoded:	August 2-6, 2021
Module Manufacturing Location:	Boise, USA (SIG)
Module Serial Number:	E5FFA39Dh
Manufacturing Identification Number (Lot Number):	421939477
Module PCB Revision:	00h

Physical & Logical Attributes

Fundamental Memory Class:	DDR4 SDRAM
Module Speed Grade:	DDR4-2666V
Base Module Type:	UDIMM (133,35 mm)
Module Capacity:	16 GB
Reference Raw Card:	A2 (8 layers)
JEDEC Raw Card Designer:	SK hynix
Module Nominal Height:	31 < H <= 32 mm
Module Thickness Maximum, Front:	1 < T <= 2 mm
Module Thickness Maximum, Back:	T <= 1 mm
Number of DIMM Ranks:	1
Address Mapping from Edge Connector to DRAM:	Standard
DRAM Device Package:	Standard Monolithic
DRAM Device Package Type:	78-ball FBGA
DRAM Device Die Count:	Single die
Signal Loading:	Not specified
Number of Column Addresses:	10 bits
Number of Row Addresses:	17 bits
Number of Bank Addresses:	2 bits (4 banks)
Bank Group Addressing:	2 bits (4 groups)
DRAM Device Width:	8 bits
Programmed DRAM Density:	16 Gb
Calculated DRAM Density:	16 Gb
Number of DRAM components:	8
DRAM Page Size:	1 KB
Primary Memory Bus Width:	64 bits
Memory Bus Width Extension:	0 bits
DRAM Post Package Repair:	Supported
Soft Post Package Repair:	Supported

DRAM Timing Parameters

Fine Timebase:	0,001 ns
Medium Timebase:	0,125 ns
CAS Latencies Supported:	10T, 11T, 12T, 13T, 14T, 15T, 16T, 17T, 18T, 19T, 20T, 21T, 22T, 23T
Minimum Clock Cycle Time (tCK min):	0,750 ns (1333,33 MHz)
Maximum Clock Cycle Time (tCK max):	1,600 ns (625,00 MHz)
CAS# Latency Time (tAA min):	14,250 ns
RAS# to CAS# Delay Time (tRCD min):	14,250 ns
Row Precharge Delay Time (tRP min):	14,250 ns
Active to Precharge Delay Time (tRAS min):	32,000 ns
Act to Act/Refresh Delay Time (tRC min):	46,250 ns
Normal Refresh Recovery Delay Time (tRFC1 min):	350,000 ns
2x mode Refresh Recovery Delay Time (tRFC2 min):	260,000 ns
4x mode Refresh Recovery Delay Time (tRFC4 min):	160,000 ns
Short Row Active to Row Active Delay (tRRD_S min):	3,000 ns
Long Row Active to Row Active Delay (tRRD_L min):	4,900 ns
Write Recovery Time (tWR min):	15,000 ns
Short Write to Read Command Delay (tWTR_S min):	2,500 ns
Long Write to Read Command Delay (tWTR_L min):	7,500 ns
Long CAS to CAS Delay Time (tCCD_L min):	5,000 ns
Four Active Windows Delay (tFAW min):	21,000 ns
Maximum Active Window (tMAW):	8192*tREFI
Maximum Activate Count (MAC):	Unlimited MAC
DRAM VDD 1,20 V operable/endurant:	Yes/Yes
Supply Voltage (VDD), Min / Typical / Max:	1,16V / 1,20V / 1,26V
Activation Supply Voltage (VPP), Min / Typical / Max:	2,41V / 2,50V / 2,75V
Termination Voltage (VTT), Min / Typical / Max:	0,565V / 0,605V / 0,640V

Thermal Parameters

Module Thermal Sensor:

Not Incorporated

SPD Protocol

SPD Revision:	1.1
SPD Bytes Total:	512
SPD Bytes Used:	384
SPD Checksum (Bytes 00h-7Dh):	C3AAh (OK)
SPD Checksum (Bytes 80h-FDh):	53D8h (OK)

Part number details

JEDEC DIMM Label:

16GB 1Rx8 PC4-2666V-UA2-11

Frequency	CAS	RCD	RP	RAS	RC	RRDS	RRDL	WR	WTRS	WTRL	FAW
1333 MHz	23	19	19	43	62	4	7	20	4	10	28
1333 MHz	22	19	19	43	62	4	7	20	4	10	28
1333 MHz	21	19	19	43	62	4	7	20	4	10	28
1333 MHz	20	19	19	43	62	4	7	20	4	10	28
1333 MHz	19	19	19	43	62	4	7	20	4	10	28
1200 MHz	18	18	18	39	56	4	6	18	3	9	26
1067 MHz	17	16	16	35	50	4	6	16	3	8	23
1067 MHz	16	16	16	35	50	4	6	16	3	8	23
933 MHz	15	14	14	30	44	3	5	14	3	7	20
933 MHz	14	14	14	30	44	3	5	14	3	7	20
800 MHz	13	12	12	26	37	3	4	12	2	6	17
800 MHz	12	12	12	26	37	3	4	12	2	6	17
667 MHz	11	10	10	22	31	2	4	10	2	5	14
667 MHz	10	10	10	22	31	2	4	10	2	5	14

Intel Extreme Memory Profiles

Profiles Revision: 2.0
Profile 1 (Certified) Enables: Yes
Profile 2 (Extreme) Enables: No
Profile 1 Channel Config: 1 DIMM/channel
XMP Parameter	Profile 1	Profile 2
Speed Grade:	DDR4-3604	N/A
DRAM Clock Frequency:	1802 MHz	N/A
Module VDD Voltage Level:	1,35 V	N/A
Minimum DRAM Cycle Time (tCK):	0,555 ns	N/A
CAS Latencies Supported:	24T,23T,22T,21T, 20T,19T,18T,17T, 16T,15T,14T,13T, 12T,11T,10T,9T,8T,7T	N/A
CAS Latency Time (tAA):	8,750 ns	N/A
RAS# to CAS# Delay Time (tRCD):	9,875 ns	N/A
Row Precharge Delay Time (tRP):	9,875 ns	N/A
Active to Precharge Delay Time (tRAS):	21,000 ns	N/A
Active to Active/Refresh Delay Time (tRC):	32,000 ns	N/A
Four Activate Window Delay Time (tFAW):	21,000 ns	N/A
Short Activate to Activate Delay Time (tRRD_S):	3,000 ns	N/A
Long Activate to Activate Delay Time (tRRD_L):	4,875 ns	N/A
Normal Refresh Recovery Delay Time (tRFC1):	350,000 ns	N/A
2x mode Refresh Recovery Delay Time (tRFC2):	260,000 ns	N/A
4x mode Refresh Recovery Delay Time (tRFC4):	160,000 ns	N/A
Show delays in clock cycles