Manufacturing Description

Module Manufacturer:	G.Skill
Module Part Number:	F4-4400C19-16GTZR
Module Series:	Trident Z RGB
DRAM Manufacturer:	Hynix
DRAM Components:	H5ANAG8N[M/A]JR-VKC
DRAM Die Revision / Process Node:	N/A / Not determined
Module Manufacturing Date:	Undefined
Module Manufacturing Location:	Taipei, Taiwan
Module Serial Number:	00000000h
Module PCB Revision:	00h

Physical & Logical Attributes

Fundamental Memory Class:	DDR4 SDRAM
Module Speed Grade:	DDR4-2666V downbin
Base Module Type:	UDIMM (133,35 mm)
Module Capacity:	16 GB
Reference Raw Card:	A3 (8 layers)
JEDEC Raw Card Designer:	SK hynix
Module Nominal Height:	31 < H <= 32 mm
Module Thickness Maximum, Front:	1 < T <= 2 mm
Module Thickness Maximum, Back:	T <= 1 mm
Number of DIMM Ranks:	1
Address Mapping from Edge Connector to DRAM:	Standard
DRAM Device Package:	Standard Monolithic
DRAM Device Package Type:	78-ball FBGA
DRAM Device Die Count:	Single die
Signal Loading:	Not specified
DRAM I/O Width:	8 bits
Column Addressing:	10 bits
Row Addressing:	17 bits
Bank Addressing:	2 bits (4 banks)
Bank Group Addressing:	2 bits (4 groups)
Programmed DRAM Density:	16 Gb
Calculated DRAM Density:	16 Gb
Number of DRAM components:	8
DRAM Page Size:	1 KB
Primary Memory Bus Width:	64 bits
Memory Bus Width Extension:	0 bits
DRAM Post Package Repair:	Supported
Soft Post Package Repair:	Supported

DRAM Timing Parameters

Fine Timebase:	0,001 ns
Medium Timebase:	0,125 ns
CAS Latencies Supported:	10T, 11T, 12T, 13T, 14T, 15T, 16T, 17T, 18T, 19T, 20T, 21T, 22T, 23T
Minimum Clock Cycle Time (tCK min):	0,750 ns (1333,33 MHz)
Maximum Clock Cycle Time (tCK max):	1,600 ns (625,00 MHz)
CAS# Latency Time (tAA min):	13,750 ns
RAS# to CAS# Delay Time (tRCD min):	13,750 ns
Row Precharge Delay Time (tRP min):	13,750 ns
Active to Precharge Delay Time (tRAS min):	32,000 ns
Act to Act/Refresh Delay Time (tRC min):	45,750 ns
Normal Refresh Recovery Delay Time (tRFC1 min):	350,000 ns
2x mode Refresh Recovery Delay Time (tRFC2 min):	260,000 ns
4x mode Refresh Recovery Delay Time (tRFC4 min):	160,000 ns
Short Row Active to Row Active Delay (tRRD_S min):	3,000 ns
Long Row Active to Row Active Delay (tRRD_L min):	4,900 ns
Write Recovery Time (tWR min):	15,000 ns
Short Write to Read Command Delay (tWTR_S min):	2,500 ns
Long Write to Read Command Delay (tWTR_L min):	7,500 ns
Long CAS to CAS Delay Time (tCCD_L min):	5,000 ns
Four Active Windows Delay (tFAW min):	21,000 ns
Maximum Active Window (tMAW):	8192*tREFI
Maximum Activate Count (MAC):	Unlimited MAC
DRAM VDD 1,20 V operable/endurant:	Yes/Yes
Supply Voltage (VDD), Min / Typical / Max:	1,16V / 1,20V / 1,26V
Activation Supply Voltage (VPP), Min / Typical / Max:	2,41V / 2,50V / 2,75V
Termination Voltage (VTT), Min / Typical / Max:	0,565V / 0,605V / 0,640V

Thermal Parameters

Module Thermal Sensor:

Not Incorporated

Integrated Temperature Sensor

Manufacturer:	OnSemi
Model:	N34TS04
Revision:	30h
Temperature Monitor Status:	Active
Current Ambient Temperature:	43,813 °C
Sensor Resolution:	0,0625 °C (12-bit ADC)
Accuracy over the active range (75 °C to 95 °C):	±1 °C
Accuracy over the monitoring range (40 °C to 125 °C):	±2 °C
Open-drain Event Output:	Disabled
10V of VHV on A0 pin:	Supported
Negative Temperature Measurements:	Supported
Interrupt capabilities:	Supported
SMBus timeout period for TS access:	25 to 35 ms

SPD Protocol

SPD Revision:	1.1
SPD Bytes Total:	512
SPD Bytes Used:	384
SPD Checksum (Bytes 00h-7Dh):	1DEEh (OK)
SPD Checksum (Bytes 80h-FDh):	AB72h (OK)

Part number details

JEDEC DIMM Label:

16GB 1Rx8 PC4-2666V-UA3-11

Frequency	CAS	RCD	RP	RAS	RC	RRDS	RRDL	WR	WTRS	WTRL	FAW
1333 MHz	23	19	19	43	61	4	7	20	4	10	28
1333 MHz	22	19	19	43	61	4	7	20	4	10	28
1333 MHz	21	19	19	43	61	4	7	20	4	10	28
1333 MHz	20	19	19	43	61	4	7	20	4	10	28
1333 MHz	19	19	19	43	61	4	7	20	4	10	28
1200 MHz	18	17	17	39	55	4	6	18	3	9	26
1200 MHz	17	17	17	39	55	4	6	18	3	9	26
1067 MHz	16	15	15	35	49	4	6	16	3	8	23
1067 MHz	15	15	15	35	49	4	6	16	3	8	23
933 MHz	14	13	13	30	43	3	5	14	3	7	20
933 MHz	13	13	13	30	43	3	5	14	3	7	20
800 MHz	12	11	11	26	37	3	4	12	2	6	17
800 MHz	11	11	11	26	37	3	4	12	2	6	17
667 MHz	10	10	10	22	31	2	4	10	2	5	14

Intel Extreme Memory Profiles

Profiles Revision: 2.0
Profile 1 (Certified) Enabled: Yes
Profile 2 (Extreme) Enabled: No
Profile 1 Channel Config: 2 DIMM/channel
XMP Parameter	Profile 1	Profile 2
Speed Grade:	DDR4-4406	N/A
DRAM Clock Frequency:	2200 MHz	N/A
Module VDD Voltage Level:	1,50 V	N/A
Minimum DRAM Cycle Time (tCK):	0,454 ns	N/A
CAS Latencies Supported:	19T	N/A
CAS Latency Time (tAA):	19T	N/A
RAS# to CAS# Delay Time (tRCD):	26T	N/A
Row Precharge Delay Time (tRP):	26T	N/A
Active to Precharge Delay Time (tRAS):	46T	N/A
Active to Active/Refresh Delay Time (tRC):	72T	N/A
Four Activate Window Delay Time (tFAW):	53T	N/A
Short Activate to Activate Delay Time (tRRD_S):	4T	N/A
Long Activate to Activate Delay Time (tRRD_L):	11T	N/A
Normal Refresh Recovery Delay Time (tRFC1):	771T	N/A
2x mode Refresh Recovery Delay Time (tRFC2):	573T	N/A
4x mode Refresh Recovery Delay Time (tRFC4):	353T	N/A
Show delays in nanoseconds